Cypress Semiconductor Perform CY7C1356C User Manual

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PRELIMINARY
256Kx36/512Kx18 Pipelined SRAM with NoBL™ Architecture
CY7C1354V25
CY7C1356V25
Cypress Semiconductor Corporation
3901 North First Street San Jose CA 95134 408-943-2600
December 2, 1999
5
Features
Pin compatible and functionally equivalent to ZBT™
Supports 200-MHz bus operations with zero wait states
Data is transferred on every clock
Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
Fully Registered (inputs and outputs) for pipelined op-
eration
Byte Write capability
Common I/O architecture
Single 2.5V power supply
Fast clock-to-output times
3.2 ns (for 200-MHz device)
3.5 ns (for 166-MHz device)
4.2 ns (for 133-MHz device)
5.0 ns (for 100-MHz device)
Clock Enable (CEN
) pin to suspend operation
Synchronous self-timed writes
Available in 100 TQFP & 119 BGA Packages
Burst Capability—linear or interleaved burst order
Functional Description
The CY7C1354V25 and CY7C1356V25 are 2.5V, 256K by 36
and 512K by 18 Synchronous-Pipelined Burst SRAMs, re-
spectively. They are designed specifically to support unlimited
true back-to-back Read/Write operations without the insertion
of wait states. The CY7C1354V25/CY7C1356V25 is equipped
with the advanced No Bus Latency™ (NoBL™) logic required
to enable consecutive Read/Write operations with data being
transferred on every clock cycle. This feature dramatically im-
proves the throughput of data through the SRAM, especially in
systems that require frequent Write/Read transitions. The
CY7C1354V25/CY7C1356V25 is pin compatible and function-
ally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN
) signal, which
when deasserted suspends operation and extends the previ-
ous clock cycle. Maximum access delay from the clock rise is
3.2 ns (200-MHz device).
Write operations are controlled by the Byte Write Selects
(BWS
a
–BWS
d
for CY7C1354V25 and BWS
a
–BWS
b
for
CY7C1356V25) and a Write Enable (WE
) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE
) provide for easy bank se-
lection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
.
CLK
A
x
CEN
WE
BWS
x
CE
1
CE
CE
2
OE
256KX36/
MEMORY
ARRAY
Logic Block Diagram
DQ
x
Data-In REG.
Q
D
CE
CONTROL
and WRITE
LOGIC
3
ADV/LD
Mode
DP
x
CY7C1354 CY7C1356
A
X
DQ
X
DP
X
BWS
X
512KX18
X = 17:0 X = 18:0
X = a, b, c, d X = a, b
X = a, b
X = a, b
X = a, b, c, d
X = a, b, c, d
OUTOUT
REGISTERS
and LOGIC
Selection Guide
7C1354V25-200
7C1356V25-200
7C1354V25-166
7C1356V25-166
7C1354V25-133
7C1356V25-133
7C1354V25-100
7C1356V25-100
Maximum Access Time (ns) 3.2 3.5 4.0 5.0
Maximum Operating Current (mA) Com’l 475 450 370 300
Maximum CMOS Standby Current (mA) Com’l 10 10 10 10
Shaded areas contain advance information.
No Bus Latency and NoBL are trademarks of Cypress Semiconductor Corporation.
ZBT is a trademark of Integrated Device Technology.
查询CY7C1356V25供应商 捷多邦,专业PCB打样工厂,24小时加急出货
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Summary of Contents

Page 1 - CY7C1356V25

PRELIMINARY256Kx36/512Kx18 Pipelined SRAM with NoBL™ Architecture CY7C1354V25CY7C1356V25 Cypress Semiconductor Corporation• 3901 North First Street •

Page 2

CY7C1354V25CY7C1356V25PRELIMINARY10Write Cycle Description[1]Function (CY7C1354V25) WE BWSdBWScBWSbBWSaRead 1XXXXWrite - No bytes written 01111Write

Page 3

CY7C1354V25CY7C1356V25PRELIMINARY11IEEE 1149.1 Serial Boundary Scan (JTAG)The CY7C1354V25/56V25 incorporates a serial boundaryscan Test Access Port (

Page 4

CY7C1354V25CY7C1356V25PRELIMINARY12SRAM does not implement the 1149.1 commands EXTEST orINTEST or the PRELOAD portion of SAMPLE / PRELOAD;rather it p

Page 5

CY7C1354V25CY7C1356V25PRELIMINARY13TAP Controller State DiagramTEST-LOGICRESETTEST-LOGIC/IDLESELECTDR-SCANCAPTURE-DRSHIFT-DREXIT1-DRPAUSE-DREXIT2-DRU

Page 6

CY7C1354V25CY7C1356V25PRELIMINARY14TAP Controller Block Diagram0012..293031Boundary Scan RegisterIdentification Register012...x012Instruction Regist

Page 7

CY7C1354V25CY7C1356V25PRELIMINARY15TAP AC Switching Characteristics Over the Operating Range[9, 10]Parameter Description Min. Max UnittTCYCTCK Clock

Page 8

CY7C1354V25CY7C1356V25PRELIMINARY16TAP Timing and Test Conditions(a)TDOCL=20 pFZ0=50ΩGND1.25VTest ClockTest Mode SelectTCKTMSTest Data-InTDITest Data

Page 9

CY7C1354V25CY7C1356V25PRELIMINARY17Identification Register DefinitionsInstruction Field Value DescriptionRevision Number(31:28)TBD Reserved for versi

Page 10 - PRELIMINARY

CY7C1354V25CY7C1356V25PRELIMINARY18Boundary Scan OrderBit #Signal NameBump IDBit #Signal NameBump ID1 TBD TBD 36 TBD TBD2 TBD TBD 37 TBD TBD3 TBD TBD

Page 11

CY7C1354V25CY7C1356V25PRELIMINARY19Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.)Storage Temperatur

Page 12

CY7C1354V25CY7C1356V25PRELIMINARY2Pin ConfigurationsAAAAA1A0DNUDNUVSSVDDDNUAAAAAAVDDQVSSDQb DQb DQb VSSVDDQDQb DQb VSSVDD VDDDQaDQaVDDQVSSDQaDQaVSSVD

Page 13

CY7C1354V25CY7C1356V25PRELIMINARY20Capacitance[15]Parameter Description Test Conditions Max. UnitCIN Input Capacitance TA = 25°C, f = 1 MHz,VDD = VD

Page 14

CY7C1354V25CY7C1356V25PRELIMINARY21Switching Characteristics Over the Operating Range[16]-200 -166 -133 -100Parameter Description Min. Max. Min. Max.

Page 15

CY7C1354V25CY7C1356V25PRELIMINARY22Switching Waveforms CENCLKADDRESSCEWE & Data-In/OuttCYCtCHtCLRA1tAHtAStWStWHtCEStCEHtCOQ4Q1= DON’T CARE= UNDEF

Page 16

CY7C1354V25CY7C1356V25PRELIMINARY23Switching Waveforms (continued)ADV/LDCLKADDRESSCEData-In/OuttCYCtCHtCLtALStALHRA1tAHtAStCEStCEHtCOQ1= DON’T CARE=

Page 17

CY7C1354V25CY7C1356V25PRELIMINARY24Document #: 38-00762-ASwitching Waveforms (continued)OEThree-StateI/OsOE TimingtEOHZtEOVtEOLZOrdering Information

Page 18

CY7C1354V25CY7C1356V25PRELIMINARY25Package Diagram100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A10151-85050-A

Page 19

CY7C1354V25CY7C1356V25PRELIMINARY© Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cyp

Page 20

CY7C1354V25CY7C1356V25PRELIMINARY3Pin Configurations (continued)2345671ABCDEFGHJKLMNPRTUDQaVDDQNCNCDQcDQdDQcDQdAA AA16M VDDQCE2AVDDQVDDQVDDQVDDQNC64M

Page 21

CY7C1354V25CY7C1356V25PRELIMINARY4Pin Definitions (100-Pin TQFP)x18 Pin Location x36 Pin Location Name I/O Type Description37, 36, 32–35, 44–50, 80–8

Page 22

CY7C1354V25CY7C1356V25PRELIMINARY574, 24 51, 80, 1, 30 DPaDPbDPcDPdI/O-SynchronousBidirectional Data Parity I/O lines. Functionally, these sig-nals a

Page 23

CY7C1354V25CY7C1356V25PRELIMINARY6B6 B6 CE3Input-SynchronousChip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction w

Page 24

CY7C1354V25CY7C1356V25PRELIMINARY7U5 U5 TDO JTAG serial outputSynchronousSerial data-out to the JTAG circuit. Delivers data on the negative edge of T

Page 25 - 51-85050-A

CY7C1354V25CY7C1356V25PRELIMINARY8IntroductionFunctional OverviewThe CY7C1354V25/1356V25 are synchronous-pipelinedBurst NoBL SRAMs designed specifica

Page 26 - 51-85115

CY7C1354V25CY7C1356V25PRELIMINARY9Notes:1. X = ”don't care,” 1 = Logic HIGH, 0 = Logic LOW, CE stands for ALL Chip Enables active. BWSx = 0 sign

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