CY7C1354V25
CY7C1356V25
PRELIMINARY
19
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
DD
Relative to GND.........−0.5V to +3.6V
DC Voltage Applied to Outputs
in High Z State
[12]
....................................−0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[12]
................................−0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Ambient
Temperature
[11]
V
DD
/V
DDQ
Com’l 0
°
C to +70
°
C 2.5V ± 5%
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
I/O Supply Voltage 2.375 2.625 V
V
OH
Output HIGH Voltage V
DD
= Min., I
OH
= –1.0 mA
[13]
2.0 V
V
OL
Output LOW Voltage V
DD
= Min., I
OL
= 1.0 mA
[13]
0.2 V
V
IH
Input HIGH Voltage 1.7 V
DD
+
0.3V
V
V
IL
Input LOW Voltage
[12]
−0.3
0.7 V
I
X
Input Load Current GND ≤ V
I
≤ V
DDQ
−5
5
µA
Input Current of MODE
−30
30
µA
I
OZ
Output Leakage
Current
GND ≤ V
I
≤ V
DDQ,
Output Disabled
−5
5
µA
I
DD
V
DD
Operating Supply V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
5-ns cycle, 200 MHz 475 mA
6-ns cycle, 166 MHz 450 mA
7.5-ns cycle, 133 MHz 320 mA
10-ns cycle, 100 MHz 300 mA
I
SB1
Automatic CE
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
f = f
MAX
= 1/t
CYC
5-ns cycle, 200 MHz 90 mA
6-ns cycle, 166 MHz 80 mA
7.5-ns cycle, 133 MHz 70 mA
65 mA10-ns cycle, 100 MHz
I
SB2
Automatic CE
Power-Down
Current—CMOS
Inputs
Max. V
DD
, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V,
f = 0
All speed grades 10 mA
I
SB3
Automatic CE
Power-Down
Current—CMOS
Inputs
Max. V
DD
, Device Deselected, or
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V
f = f
MAX
= 1/t
CYC
5-ns cycle, 200 MHz 45 mA
6-ns cycle, 166 MHz 40 mA
7.5-ns cycle, 133 MHz 35 mA
30 mA10-ns cycle, 100 MHz
I
SB4
Automatic CE
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = 0
All speed grades 25 mA
Shaded areas contain advance information.
Notes:
11. T
A
is the case temperature.
12. Minimum voltage equals
−
2.0V for pulse durations of less than 20 ns.
13. The load used for V
OH
and V
OL
testing is shown in figure (b) of the A/C test conditions.
(42 pages)
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